Description nchannel enhancement mode vertical dmos transistor in a sot54. Nchannel enhancement mode vertical dmos fet issue 2 march 94 features 100 volt v ds r dson 0. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher. Nchannel enhancementmode vertical dmos fetsg indicates package is rohs compliant green. Zvn3310a nchannel enhancement mode vertical dmos fet. Bsn304 nchannel enhancement mode vertical d mos transistor age m3d106. General description the supertex 2n7002 is an enhancementmode normallyoff transistor that utilizes a vertical dmos structure and supertexs wellproven silicongate manufacturing process. Nchannel enhancement mode mosfet description applications the spn2310 is the nchannel enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. This enhancementmode normallyoff transistor utilizes a vertical dmos structure and supertexs wellproven, silicongate manufacturing process. T2n7002ak toshiba fieldeffect transistor silicon nchannel mos type. Philips semiconductors product specification nchannel enhancement mode bsh105 mos transistor fig. Additionally, in this diagram, the gate is shown as an l shape, whose input leg is closer to s than d, also indicating which is which.
Advanced dmos technology not recommended for new designs. For enhancementmode and depletionmode mosfet symbols in columns two and five, the source terminal is the one connected to the arrowhead. Vn0104 vn0106 vn0109 nchannel enhancementmode vertical. This combination produces devices with the power handling capabilities of bipolar transistors and with the. The function is nchannel enhancementmode vertical dmos fet. Zvn4424c n channel enhancement mode vertical dmos fet datasheet keywords zetex zvn4424a zvn4424c n channel enhancement mode vertical dmos fet datasheet compact eline to92 style package 240 volt bvds rdson4. The supertex 2n7000 is an enhancementmode normally off transistor that utilizes a vertical dmos structure and supertexs wellproven silicongate. This enhancementmode normallyoff transistor utilizes a vertical dmos structure and wellproven, silicongate manufacturing process. Nchannel enhancement mode vertical d mos transistor bss89 limiting values in accordance with the absolute maximum rating system iec 4. Device mounted on a printedcircuit board, maximum lead length 4 mm. Zvn3306a nchannel enhancement mode vertical dmos fet. Tn2501 nchannel enhancementmode vertical dmos fet data sheet microchip technology inc. Nchannel enhancement mode bs108 vertical dmos transistor. Bsn254 bsn254a for detailed information see the latest issue of handbook sc07 or data sheet nchannel enhancement mode vertical dmos transistors nchannel enhancement node vertical dmos transistors in to92 variant envelope and designed for use as line current interrupters in telephone sets and for application in relay, highspeed and.
This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature. Zvn2106a nchannel enhancement mode vertical dmos fet. Tn2501 nchannel enhancementmode vertical dmos fet data sheet. N channel enhancement mode vertical dmos power fets, irf520 datasheet, irf520 circuit, irf520 data sheet. Zvn4310a nchannel enhancement mode vertical dmos fet datasheet.
The function is n channel enhancement mode vertical dmos transistor. Depletion mode device offers low r dson at cold temperatures high input impedance small package size. Low threshold dmos technology these low threshold enhancementmode normallyoff transistors utilize a vertical dmos structure and supertexs wellproven silicongate manufacturing process. Zvn4424a zvn4424c nchannel enhancement mode vertical dmos. Nchannel enhancement mode vertical dmos fet issue 2 march 94 features 100 volt v ds r dson 10. The function is nchannel enhancement mode vertical dmos transistor. Zvn4424c nchannel enhancement mode vertical dmos fet datasheet keywords zetex zvn4424a zvn4424c nchannel enhancement mode vertical dmos fet datasheet compact eline to92 style package 240 volt bvds rdson4.
Parameter symbol value unit drainsource voltage v ds 100 v continuous drain current at t amb25c i d 200 ma pulsed drain current i dm 2a gatesource voltage v gs 20 v power dissipation at t amb25c p tot. This enhancement mode normallyoff transistor utilizes a vertical dmos structure and wellproven, silicongate manufacturing process. Introduction to power mosfets and their applications an558 national semiconductor application note 558 ralph locher december 1988 introduction to power mosfets and their applications introduction the high voltage power mosfets that are available today are nchannel, enhancementmode, double diffused, metaloxidesilicon, field effect transistors. Parameter symbol value unit drainsource voltage v ds 60 v continuous drain current at t amb25c i d 450 ma pulsed drain current i dm 8a gate source voltage v gs 20 v power dissipation at t amb25c p tot 700 mw. Features free from secondary breakdown low power drive requirement ease of paralleling low c. For enhancement mode and depletion mode mosfet symbols in columns two and five, the source terminal is the one connected to the arrowhead. These enhancementmode normallyoff transistors utilize a vertical dmos structure and supertexs wellproven silicon gate. Parameter symbol value unit drainsource voltage v ds 60 v continuous drain current at t amb25c i d 600 ma pulsed drain current i dm 8a gatesource voltage v gs 20 v power dissipation at t amb25c p tot 0. An nchannel depletionmode power mosfet differs from the enhancementmode in that it is normally on at 0v gate bias and requires a negative gate bias to. The tn2 lowthreshold, enhancement mode normallyoff transistor uses a vertical dmos structure and a wellproven silicongate manufacturing process. Device mounted on an epoxy printedcircuit board, 40 x 40 x 1. Features free from secondary breakdown low power drive requirement ease of paralleling.
Advanced dmos technology these enhancementmode normallyoff transistors utilize a vertical dmos structure and supertexs wellproven silicongate manufacturing process. Zvn4424a zvn4424c nchannel enhancement mode vertical. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and. Bsn254 bsn254a for detailed information see the latest issue of handbook sc07 or data sheet n channel enhancement mode vertical dmos transistors n channel enhancement node vertical dmos transistors in to92 variant envelope and designed for use as line current interrupters in telephone sets and for application in relay, highspeed and. Nchannel depletionmode integrated circuits division. Static characteristics tj 25 c unless otherwise speci. Although mosfets can be made in either polarity, nchannel mosfets are available in all four types while pchannel depletion mode devices are not generally available. Vn10km n channel enhancement mode components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Nchannel enhancement mode vertical dmos fet issue 2 march 94 features 60 volt v ds r dson 2. Vp0104 vp0106 vp0109 pchannel enhancementmode vertical. Applications line current interruptor in telephone sets relay, highspeed and line transformer drivers. This combination produces a device with the power handling capabilities of bipolar transistors, and the. A comparison between operation of an nchannel depletionmode and enhancementmode mos devices is shown in figure. Zvn4206a nchannel enhancement mode vertical dmos fet datasheet.
An558 introduction to power mosfets and their applications. Zvn4310a nchannel enhancement mode vertical dmos fet. Parameter symbol value unit drainsource voltage v ds 60 v continuous drain current at t amb25c i d 270 ma pulsed drain current i dm 3a gatesource voltage v gs 20 v power dissipation at t amb25c p tot 625 mw. These enhancementmode normallyoff transistors utilize a vertical dmos structure and supertexs wellproven silicongate manufacturing process. Applications line current interruptor in telephone sets applications in relay, highspeed and line transformer drivers. Nchannel enhancement mode vertical dmos fet issue 2 march 94 features 60 volt v ds r dson 5. The function is n channel enhancement mode vertical dmos fet. Nchannel enhancement mode vertical dmos fet applications motor controls converters amplifiers switches power supply circuits drivers relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. Nchannel enhancement vn10lp mode vertical dmos fet issue 2 november 2005 features 60 volt vds rdson5. Transistor mounted on printed circuit board, maximum lead length 4 mm, mounting pad for drain leads minimum 10 mm. Nchannel enhancement mode vertical dmos transistor bsn274. The zvn4424a is a 240v eline nchannel enhancement mode vertical dmos fet featuring low threshold and fast switching.
Nchannel enhancement mode vertical dmos transistor bs108 features direct interface to cmos, ttl, etc. N channel enhancement mode vertical dmos transistor bs108 features direct interface to cmos, ttl, etc. Tn2501 n channel enhancement mode vertical dmos fet data sheet microchip technology inc. Nchannel enhancement mode vertical dmos transistor bsn304 features direct interface to cmos, ttl, etc. Description nchannel enhancement mode vertical dmos transistor in a to92. Vn0109 vn0104 vn0106 nchannel enhancementmode vertical dmos fet. The tn2 lowthreshold, enhancementmode normallyoff transistor uses a vertical dmos structure and a wellproven silicongate manufacturing process. Nchannel enhancement mode vertical dmos transistor bss89 limiting values in accordance with the absolute maximum rating system iec 4. Zvn3306a nchannel enhancement mode vertical dmos fet datasheet.
N channel enhancement mode vertical dmos fet applications motor controls converters amplifiers switches power supply circuits drivers relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. Buy vn3205n6 supertex, learn more about vn3205n6 nchannel enhancementmode vertical dmos fets, view the manufacturer, and stock, and datasheet pdf for the vn3205n6 at jotrin electronics. Thermal characteristics note to the limiting values and thermal characteristics 1. Vn0104 vn0106 vn0109 nchannel enhancementmode vertical dmos fet. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in mos devices. Sot23 the cpc3982 is an nchannel, depletion mode, field effect transistor fet that utilizes ixys integrated circuits divisions proprietary thirdgeneration vertical dmos process. N channel enhancement mode mosfet description applications the spn2310 is the n channel enhancement mode power field effect transistors are produced using high cell density, dmos trench technology. Nchannel enhancement mode vertical d mos transistor bsp thermal characteristics note 1. Nchannel depletionmode power mosfet nchannel enhancementmode is the most popular for use in power switching circuits because of low onstate resistance compared to pchannel devices. The mosfet transistor family consists of two main types, these being depletion mode and enhancement mode types. Nchannel enhancement mode vertical dmos transistor bsp thermal characteristics note 1. Bsn304 nchannel enhancement mode vertical dmos transistor. Bsn254a datasheet212 pages philips nchannel enhancement.
Nchannel enhancement mode vertical d mos transistor book, halfpage m3d087. This combination produces devices withthe power handling capabilities of bipolar transistors and with thehigh input impedance and positive temperature coefficient. Tn2 nchannel enhancementmode vertical dmos fet data sheet. Bsp nchannel enhancement mode vertical dmos transistor. Vp2206 p channel enhancement mode vertical dmos fet features general description free from secondary breakdown the supertex vp2206 is an enhancement mode normally low power drive requirement off transistor that utilizes a vertical dmos structure and supertexs wellproven silicongate. This low threshold, enhancementmode normallyoff transistor utilizes a vertical dmos structure and supertexs wellproven, silicongate manufacturing process.
Nchannel enhancementmode vertical dmos fets online from elcodis, view and download vn2110k1 pdf datasheet, mosfets, ganfets single specifications. Nchannel enhancement mode vertical dmos fet issue 2 june 94 features 60 volt v ds r dson 1. The mosfet is ideal for earth recall and dialling switches, electronic hook switches, telecoms and high voltage dcdc converters. Zvn2106a nchannel enhancement mode vertical dmos fet datasheet. Tn5325 nchannel enhancementmode vertical dmos fet data. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in mos devices. Zvn4206a nchannel enhancement mode vertical dmos fet. Vp2206 pchannel enhancementmode vertical dmos fet features general description free from secondary breakdown the supertex vp2206 is an enhancementmode normally low power drive requirement off transistor that utilizes a vertical dmos structure and supertexs wellproven silicongate. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coef. Nchannel enhancementmode vertical dmos fet applications motor controls converters amplifiers switches power supply circuits drivers relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc. Bsn274a limiting values in accordance with the absolute maximum system iec 4 thermal resistance notes 1. Vn10km nchannel enhancement mode components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes.
General description this enhancementmode normallyoff transistor utilizes a vertical dmos structure and supertex s wellproven, silicongate manufacturing process. Parameter symbol value unit drainsource voltage v ds 100 v continuous drain current at t amb25c i d 0. N channel enhancement vn10lp mode vertical dmos fet issue 2 november 2005 features 60 volt vds rdson5. Supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Description n channel enhancement mode vertical dmos transistor in a sot54. Bsn254afeatures direct interface to cmos, ttl, etc.
505 1035 1524 1169 1539 176 957 1443 1079 692 794 955 973 410 16 530 1075 859 528 241 734 1575 385 47 219 250 987 231 891 257 947 1202 263